| PART |
Description |
Maker |
| UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC Corp.
|
| UPD44325362F5-E50-EQ2 UPD44325082 UPD44325082F5-E4 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164365F5-E60-EQ1 UPD44164085 UPD44164085F5-E4 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| CYPT1542AV18-250GCMB CYPT1544AV18-250GCMB CYRS1542 |
72-Mbit QDRII SRAM Two-Word Burst Architecture with RadStop™ Technology
|
Cypress
|
| CYPT1543AV18-250GCMB CYPT1545AV18-250GCMB CYRS1543 |
72-Mbit QDRII SRAM Four-Word Burst Architecture with RadStop™ Technology
|
Cypress
|
| CY7C2263KV18-450BZXI CY7C2263KV18-550BZXI CY7C2265 |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C1563XV18-633BZXC CY7C1565XV18-633BZXC |
72-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
